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IRFZ48RL Datasheet

  • IRFZ48RL

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | ...

  • 176.35KB

  • 10頁

  • ETC

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PD - 94074
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
IRFZ48RS
IRFZ48RL
V
DSS
= 60V
Advanced Process Technology
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ48
for Linear/Audio Applications
D
R
DS(on)
= 0.018鈩?/div>
G
S
I
D
= 50*A
Description
Advanced HEXFET
廬
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D
2
Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D
2
Pak
IRFZ48RS
TO-262
IRFZ44RL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
50*
50*
290
190
1.3
鹵 20
100
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.8
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
05/21/02

IRFZ48RL相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
    ETC
  • 英文版
    HEXFETR POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
    ETC
  • 英文版
    HEXFET Power MOSFET
    IRF
  • 英文版
    HEXFET Power MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    (166.12 k)
    ETC
  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

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