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IRFZ44VSTRL Datasheet

  • IRFZ44VSTRL

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | ...

  • 10頁(yè)

  • ETC

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PD - 94050A
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
HEXFET
廬
Power MOSFET
D
IRFZ44VS
IRFZ44VL
V
DSS
= 60V
R
DS(on)
= 16.5m鈩?/div>
G
S
I
D
= 55A
Description
Advanced HEXFET
廬
Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
D
2
Pak
IRFZ44VS
TO-262
IRFZ44VL
The through-hole version (IRFZ44VL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55
39
220
115
0.77
鹵 20
115
55
11
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.3
40
Units
擄C/W
www.irf.com
1
01/04/02

IRFZ44VSTRL 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 55A

  • 16.5 毫歐 @ 31A，10V

  • 4V @ 250µA

  • 67nC @ 10V

  • 1812pF @ 25V

  • 115W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

IRFZ44VSTRL相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
    ETC
  • 英文版
    HEXFETR POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
    ETC
  • 英文版
    HEXFET Power MOSFET
    IRF
  • 英文版
    HEXFET Power MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    (166.12 k)
    ETC
  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

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