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IRFZ44NSTRL Datasheet

  • IRFZ44NSTRL

  • TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | ...

  • 10頁(yè)

  • ETC

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PD - 94153
Advanced Process Technology
l
Surface Mount (IRFZ44NS)
l
Low-profile through-hole (IRFZ44NL)
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
IRFZ44NS
IRFZ44NL
HEXFET
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 0.0175鈩?/div>
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
G
I
D
= 49A
S
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
49
35
160
3.8
94
0.63
鹵 20
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.5
40
Units
擄C/W
www.irf.com
1
03/13/01

IRFZ44NSTRL相關(guān)型號(hào)PDF文件下載

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    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
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  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
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