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IRFZ44EL Datasheet

  • IRFZ44EL

  • Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

  • 164.95KB

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET
廬
Power MOSFET
D
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRFZ44ES)
Low-profile through-hole (IRFZ44EL)
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 60V
R
DS(on)
= 0.023鈩?/div>
G
S
I
D
= 48A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
D 2 Pak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛
聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
聟
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
48
34
192
110
0.71
鹵 20
220
29
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
1.4
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
11/18/97

IRFZ44EL 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 48A

  • 23 毫歐 @ 29A，10V

  • 4V @ 250µA

  • 60nC @ 10V

  • 1360pF @ 25V

  • 110W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262

  • 管件

  • *IRFZ44EL

IRFZ44EL相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
    ETC
  • 英文版
    HEXFETR POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
    ETC
  • 英文版
    HEXFET Power MOSFET
    IRF
  • 英文版
    HEXFET Power MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    (166.12 k)
    ETC
  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

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