鈩?/div>
I
D
= 26A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
26
18
100
56
0.37
鹵20
110
16
5.6
4.6
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
2.7
鈥撯€撯€撯€?/div>
62
Units
擄C/W
8/29/95
IRFZ34 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
60V
30A
50 毫歐 @ 18A，10V
4V @ 250µA
46nC @ 10V
1200pF @ 25V
88W
通孔
TO-220-3
TO-220AB
管件
*IRFZ34
IRFZ34相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
ETC
-
英文版
HEXFETR POWER MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
ETC
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
ETC
-
英文版
HEXFET TRANSISTORS
IRF
-
英文版
HEXFET TRANSISTORS
IRF [Inter...
-
英文版
HEXFET TRANSISTORS
IRF
-
英文版
HEXFET TRANSISTORS
IRF [Inter...
-
英文版
(166.12 k)
ETC
-
英文版
HEXFET? POWER MOSFET
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
ETC
-
英文版
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRF
-
英文版
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
ETC
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
Power Field Effect Transistors
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