= 0.042鈩?/div>
I
D
= 28A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
28
20
112
68
0.46
鹵 20
97
17
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
2.2
鈥撯€撯€撯€?/div>
62
Units
擄C/W
11/4/97
IRFZ34E 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
60V
28A
42 毫歐 @ 17A，10V
4V @ 250µA
30nC @ 10V
680pF @ 25V
68W
通孔
TO-220-3
TO-220AB
管件
*IRFZ34E
IRFZ34E相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
ETC
-
英文版
HEXFETR POWER MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
ETC
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
ETC
-
英文版
HEXFET TRANSISTORS
IRF
-
英文版
HEXFET TRANSISTORS
IRF [Inter...
-
英文版
HEXFET TRANSISTORS
IRF
-
英文版
HEXFET TRANSISTORS
IRF [Inter...
-
英文版
(166.12 k)
ETC
-
英文版
HEXFET? POWER MOSFET
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
ETC
-
英文版
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRF
-
英文版
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
ETC
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
Power Field Effect Transistors
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