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IRFZ24VS Datasheet

  • IRFZ24VS

  • 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

  • 10頁

  • ETC

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PD - 94182
IRFZ24VS
IRFZ24VL
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
D
V
DSS
= 60V
R
DS(on)
= 60m鈩?/div>
G
S
I
D
= 17A
Description
Advanced HEXFET
廬
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
D
2
Pak
IRFZ24VS
TO-262
IRFZ24VL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
聡
Continuous Drain Current, V
GS
@ 10V
聡
Pulsed Drain Current
聛聡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
44
0.29
鹵 20
17
4.4
4.2
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
3.4
40
Units
擄C/W
www.irf.com
1
02/14/02

IRFZ24VS相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

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