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IRFY9140 Datasheet

  • IRFY9140

  • POWER MOSFET THRU-HOLE (TO-257AA)

  • 7頁

  • IRF

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PD - 94197C
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY9140
IRFY9140M
IRFY9140, IRFY9140M
100V, P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
廬
R
DS(on)
0.20
鈩?/div>
0.20
鈩?/div>
I
D
-15.8A
-15.8A
Eyelets
Glass
Glass
HEXFET
廬
MOSFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The
HEXFET
transistor鈥檚 totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY9140C, IRFY9140CM
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25擄C
ID @ VGS = -10V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-15.8
-10
-60
100
0.8
鹵20
640
-15.8
10
-5.5
-55 to 150
300(0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
01/18/07

IRFY9140相關(guān)型號(hào)PDF文件下載

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    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
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