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IRFY430CM Datasheet

  • IRFY430CM

  • POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

  • 6頁(yè)

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Provisional Data Sheet No. PD 9.1291B
HEXFET
廬
POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5鈩?HEXFET
HEXFET technology is the key to International Rectifier鈥檚
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor鈥檚 totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Product Summary
Part Number
IRFY430CM
BV
DSS
500V
R
DS(on)
1.5鈩?/div>
I
D
4.5A
Features
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ V GS=10V, TC = 25擄C
ID @ VGS=10V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy
聜
Avalance Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRFY430CM
4.5
2.8
18
75
0.6
鹵20
280
4.5
7.5
3.5
-55 to 150
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
Units
A
W
W/K聟
V
mJ
A
mJ
V/ns
擄C
擄C
g
To Order

IRFY430CM相關(guān)型號(hào)PDF文件下載

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  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) ...
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB [...
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB

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