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IRFY140M Datasheet

  • IRFY140M

  • TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 18.4A I(D)...

  • 163.20KB

  • 7頁

  • ETC

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PD - 94185
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY140
IRFY140M
IRFY140,IRFY140M
100V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
廬
R
DS(on)
0.077
鈩?/div>
0.077
鈩?/div>
I
D
16*A
16*A
Eyelets
Glass
Glass
HEXFET
廬
MOSFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor鈥檚 totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY140C, IRFY140CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by pin diameter
For footnotes refer to the last page
16*
16*
64
100
0.8
鹵20
230
16*
10
5.5
-55 to 150
300(0.063in./1.6mm from case for 10 sec)
3.3 (Typical)
W
W/擄C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
4/18/01

IRFY140M相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) ...
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB [...
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB

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