Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175鈩?Operating Temperature
n
Lower Leakage Current : 10
渭A
(Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.041
惟
(Typ.)
IRFW/I540A
BV
DSS
= 100 V
R
DS(on)
= 0.052
惟
I
D
= 28 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25鈩? *
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
100
28
19.8
110
鹵20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.4
40
62.5
鈩?W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
餂?001
Fairchild Semiconductor Corporation
1
IRFW540A相關(guān)型號PDF文件下載
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | ...
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