Provisional Data Sheet No. PD-9.2002
鈩?/div>
HEXFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transis-
tors. The efficient geometry design achieves ver y
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor鈥檚 totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
IRFV260
BV
DSS
200V
R
DS(on)
0.060鈩?/div>
I
D
45A*
Features:
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
I D @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* ID current limited by pin diameter
300 (0.063 in. (1.6mm) from case for 10 sec.)
10.9 (typical)
IRFV260
45*
29
180
300
2.4
鹵20
700
45
30
4.3
-55 to 150
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
o
C
g
To Order
1
2
3
4
