PD - 96906B
IRFB4610
IRFS4610
IRFSL4610
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
G
S
HEXFET
廬
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max.
I
D
100V
11m
:
14m
:
73A
G DS
TO-220AB
IRFB4610
G DS
D
2
Pak
IRFS4610
G DS
TO-262
IRFSL4610
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dV/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
f
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
73
52
290
190
1.3
鹵 20
7.6
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/擄C
V
V/ns
擄C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
d
Avalanche Current
c
Repetitive Avalanche Energy
f
370
See Fig. 14, 15, 16a, 16b,
mJ
A
mJ
Thermal Resistance
Symbol
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Parameter
Junction-to-Case
j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
j
Junction-to-Ambient (PCB Mount) , D
2
Pak
ij
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.77
鈥撯€撯€?/div>
62
40
Units
擄C/W
www.irf.com
1
11/3/04
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