PD - 91817A
SMPS MOSFET
IRFS9N60A
HEXFET
廬
Power MOSFET
Applications
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
600V
R
DS
(on) max
0.75鈩?/div>
I
D
9.2A
G DS
D
2
Pak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.2
5.8
37
170
1.3
鹵 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
V/ns
擄C
Applicable Off Line SMPS Topologies:
l
l
Active Clamped Forward
Main Switch
Notes
聛
through
聟
are on page 9
www.irf.com
1
9/23/99
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