鈩?/div>
I
D
= -4.4 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 鈥?from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
-200
-4.4
-3.3
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
-18
+ 30
_
258
-4.4
3.3
-5.0
33
0.26
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
胃
JC
R
胃
JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.79
62.5
Units
o
C/W
Rev. B
漏1999 Fairchild Semiconductor Corporation