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IRFS710B Datasheet

  • IRFS710B

  • 400V N-Channel MOSFET

  • 10頁(yè)

  • FAIRCHILD

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IRF710B/IRFS710B
November 2001
IRF710B/IRFS710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0A, 400V, R
DS(on)
= 3.4鈩?@V
GS
= 10 V
Low gate charge ( typical 7.7 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
IRF710B
400
2.0
1.3
6.0
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS710B
2.0 *
1.3 *
6.0 *
100
2.0
3.6
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
36
0.29
-55 to +150
300
23
0.19
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF710B
3.44
0.5
62.5
IRFS710B
5.37
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

IRFS710B 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 400 V

  • +/- 30 V

  • 2 A

  • 3.4 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220F

  • Tube

  • 25 ns

  • - 55 C

  • 23 W

  • 25 ns

  • 50

  • 20 ns

IRFS710B相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19.4A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 27.7A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 27.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 820MA I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 750MA I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 12.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10.2A I(D)...
    ETC
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20.7A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.9A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 6.9A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    500V N-Channel MOSFET
    FAIRCHILD

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