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IRFS630B Datasheet

  • IRFS630B

  • 200V N-Channel MOSFET

  • 860.89KB

  • 10頁(yè)

  • FAIRCHILD

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IRF630B/IRFS630B
IRF630B/IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
9.0A, 200V, R
DS(on)
= 0.4鈩?@V
GS
= 10 V
Low gate charge ( typical 22 nC)
Low Crss ( typical 22 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
IRF630B
200
9.0
5.7
36
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS630B
9.0 *
5.7 *
36 *
160
9.0
7.2
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
72
0.57
-55 to +150
300
38
0.3
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF630B
1.74
0.5
62.5
IRFS630B
3.33
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. B, December 2002

IRFS630B相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19.4A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 27.7A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 27.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 820MA I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 750MA I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 12.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10.2A I(D)...
    ETC
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20.7A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.9A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 6.9A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10.4A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    500V N-Channel MOSFET
    FAIRCHILD

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