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IRFS624B Datasheet

  • IRFS624B

  • 250V N-Channel MOSFET

  • 10頁(yè)

  • FAIRCHILD

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IRF624B/IRFS624B
November 2001
IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4.1A, 250V, R
DS(on)
= 1.1鈩?@V
GS
= 10 V
Low gate charge ( typical 13.5 nC)
Low Crss ( typical 9.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
IRF624B
250
4.1
2.6
16.4
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS624B
4.1 *
2.6 *
16.4 *
75
4.1
4.9
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
49
0.39
-55 to +150
300
34
0.27
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF624B
2.54
0.5
62.5
IRFS624B
3.7
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, November 2001

IRFS624B相關(guān)型號(hào)PDF文件下載

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    TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10.4A I(D)...
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    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.5A I(D) ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5.5A I(D) ...
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