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IRFS610B Datasheet

  • IRFS610B

  • 200V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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IRF610B/IRFS610B
IRF610B/IRFS610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.3A, 200V, R
DS(on)
= 1.5鈩?@V
GS
= 10 V
Low gate charge ( typical 7.2 nC)
Low Crss ( typical 6.8 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
IRF610B
200
3.3
2.1
10
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS610B
3.3 *
2.1 *
10 *
40
3.3
3.8
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
38
0.31
-55 to +150
300
22
0.18
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF610B
3.28
0.5
62.5
IRFS610B
5.71
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002

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