0.025鈩?/div>
I
D
59A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
TO-220AB
l
Fully Characterized Avalanche Voltage
IRFB59N10D
and Current
D
2
Pak
IRFS59N10D
TO-262
IRFSL59N10D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
聡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw聠
Max.
59
42
236
3.8
200
1.3
鹵 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V/ns
擄C
Typical SMPS Topologies
l
l
Half-bridge and Full-bridge DC-DC Converters
Full-bridge Inverters
Notes
聛
through
聡
are on page 11
www.irf.com
1
4/17/00