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IRFRU5305 Datasheet

  • IRFRU5305

  • Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)

  • 158.15KB

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 91402A
IRFR/U5305
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
V
DSS
= -55V
R
DS(on)
= 0.065鈩?/div>
G
I
D
= -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
廬
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聠
Avalanche Current聛聠
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
-31
-22
-110
110
0.71
鹵 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.4
50
110
Units
擄C/W
10/23/00

IRFRU5305相關(guān)型號(hào)PDF文件下載

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    ETC
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    HEXFET POWER MOSFET
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    HEXFET? Power MOSFET
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    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 23A I(D) | ...
    ETC
  • 英文版
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  • 英文版
    HEXFET? Power MOSFETs

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