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IRFR3411 Datasheet

  • IRFR3411

  • HEXFET Power MOSFET

  • 10頁(yè)

  • IRF

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PD - 95371A
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
G
IRFR3411PbF
IRFU3411PbF
HEXFET
廬
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 44m鈩?/div>
Description
Advanced HEXFET
廬
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
S
I
D
= 32A
D-Pak
IRFR3411
I-Pak
IRFU3411
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
32
23
110
130
0.83
鹵 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.2
50
110
Units
擄C/W
www.irf.com
1
12/03/04

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