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IRFR220N Datasheet

  • IRFR220N

  • Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD- 94048
SMPS MOSFET
Applications
l
High frequency DC-DC converters
IRFR220N
IRFU220N
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max (m鈩?
200V
600
I
D
5.0A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR22ON
I-Pak
IRFU220N
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.0
3.5
20
43
0.71
鹵 20
7.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
V/ns
擄C
Typical SMPS Topologies
l
Telecom 48V input Forward Converters
Notes
through
are on page 10
www.irf.com
1
11/29/00

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