Enhanced dv/dt capabilities offer improved ruggedness.
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Higher Gate voltage threshold offers improved noise immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
21
13
84
330
Units
A
W
W/擄C
V
V/ns
擄C
c
P
D
@T
C
= 25擄C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
d
2.6
鹵30
11
-55 to + 150
300 (1.6mm from case )
1.1(10)
N鈥 (lbf鈥n)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
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160
400
480
5.3
21
A
84
1.5
240
610
730
7.9
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
D
脙
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
T
J
= 25擄C, I
S
= 21A, V
GS
= 0V
T
J
= 25擄C, I
F
= 21A
T
J
= 125擄C, di/dt = 100A/碌s
J
J
f
S
1540 2310
f
T = 25擄C, I = 21A, V = 0V
f
T = 125擄C, di/dt = 100A/碌s
f
S
GS
T
J
= 25擄C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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02/18/03
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英文版
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HEXFET? Power MOSFET
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HEXFET? Power MOSFETs
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