Enhanced dv/dt capabilities offer improved ruggedness.
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Higher Gate voltage threshold offers improved noise immunity
.
SUPER TO-247AC
Absolute Maximum Ratings
I
D
@ T
C
= 25擄C
I
DM
Parameter
Continuous Drain Current, V
GS
@ 10V
Max.
38
24
150
540
4.3
鹵30
13
-55 to + 150
300 (1.6mm from case )
1.1(10)
N鈥 (lbf鈥n)
W
W/擄C
V
V/ns
擄C
Units
A
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
P
D
@T
C
= 25擄C Power Dissipation
V
GS
dv/dt
T
J
T
STG
聶
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
d
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
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170
420
830
9.1
38
A
150
1.5
250
630
1240
14
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
D
脙
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
T
J
= 25擄C, I
S
= 38A, V
GS
= 0V
T
J
= 25擄C, I
F
= 38A
T
J
= 125擄C, di/dt = 100A/碌s
J
J
f
S
2600 3900
f
T = 25擄C, I = 38A, V = 0V
f
T = 125擄C, di/dt = 100A/碌s
f
S
GS
T
J
= 25擄C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
02/12/03
IRFPS38N60L 產(chǎn)品屬性
Vishay
MOSFET
N-Channel
600 V
+/- 30 V
38 A
0.15 Ohms
Single
+ 150 C
Through Hole
TO-274AA
Tube
69 ns
- 55 C
540 W
130 ns
500
92 ns
IRFPS38N60L相關(guān)型號(hào)PDF文件下載
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