.
typ.
Super-247鈩?/div>
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25擄C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Max.
34
22
140
450
3.6
鹵30
15
-55 to + 150
300 (1.6mm from case )
1.1(10)
Units
A
W
W/擄C
V
V/ns
擄C
N鈥 (lbf鈥n)
聶
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
170
220
670
8.5
34
A
140
1.5
250
330
1010
鈥撯€撯€?/div>
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25擄C, I
S
= 34A, V
GS
= 0V
T
J
= 25擄C, I
F
= 34A
J
J
脙
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
f
1500 2200
f
T = 25擄C, I = 34A, V = 0V
f
T = 125擄C, di/dt = 100A/碌s
f
T
J
= 125擄C, di/dt = 100A/碌s
S
GS
T
J
= 25擄C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
8/26/04
IRFPS35N50L相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
IRF
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRF
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRF [Inter...
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
IRF
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
IRF [Inter...
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
IRF
-
英文版
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
IRF [Inter...
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) |...
ETC
1
2
3
4
5
6
7
8
