PD- 94417A
IRFPS30N60K
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
HEXFET
廬
Power MOSFET
V
DSS
600V
R
DS(on)
typ.
160m鈩?/div>
I
D
30A
Super-247鈩?/div>
Max.
30
19
120
450
3.6
鹵 30
13
-55 to + 150
300
Units
A
W
W/擄C
V
V/ns
擄C
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
520
30
45
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Junction-to-Case
聠
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
聠
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
Max.
0.28
鈥撯€撯€?/div>
40
Units
擄C/W
www.irf.com
1
8/26/04
IRFPS30N60K 產(chǎn)品屬性
Vishay
MOSFET
N-Channel
600 V
+/- 30 V
30 A
0.19 Ohms
Single
+ 150 C
Through Hole
TO-274AA
Tube
50 ns
- 55 C
450 W
120 ns
500
56 ns
IRFPS30N60K相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
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英文版
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Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
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Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) |...
ETC
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