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PD - 9.1233
IRFPC50LC
HEXFET
廬
Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
V
DSS
= 600V
R
DS(on)
= 0.60
鈩?/div>
I
D
= 11A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
11
7.3
44
190
1.5
鹵30
920
11
19
3.0
-55 to + 150
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.24
鈥撯€撯€撯€?/div>
Max.
0.65
鈥撯€撯€撯€?/div>
40
Units
擄C/W
To Order
Revision 0
IRFPC50LC 產(chǎn)品屬性
IRFPC50LC
500
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
600V
11A
600 毫歐 @ 6.6A，10V
4V @ 250µA
84nC @ 10V
2300pF @ 25V
190W
通孔
TO-247-3
TO-247-3
管件
*IRFPC50LC
IRFPC50LC相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
ETC
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
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英文版
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRF
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRF [Inter...
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
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英文版
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
IRF [Inter...
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英文版
N-CHANNEL POWER MOSFETS
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英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
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英文版
N-CHANNEL POWER MOSFETS
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N-CHANNEL POWER MOSFETS
SAMSUNG [S...
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英文版
N-CHANNEL POWER MOSFETS
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英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
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英文版
N-CHANNEL POWER MOSFETS
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英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) |...
ETC
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