IRFP9150 Datasheet

IC型號：
IRFP9150
PDF描述：
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
文件大小：
63.51KB
PDF頁數(shù)：
7頁
芯片廠家：
INTERSIL

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IRFP9150

Data Sheet

August 1999

File Number

2293.4

25A, 100V, 0.150 Ohm, P-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a speci鏗乪d level of energy in the

breakdown avalanche mode of operation. It is a P-Channel

enhancement mode silicon-gate power 鏗乪ld effect transistor

designed for applications such as switching regulators,

switching convertors, motor drivers, relay drivers, and drivers

for high power bipolar switching transistors requiring high

speed and low gate drive power. These types can be

operated directly from integrated circuits.

The P-Channel IRFP9150 is an approximate electrical

complement to the N-channel IRFP150.

Formerly developmental type TA49230.

Features

鈥?25A, 100V

鈥?r

DS(ON)

= 0.150鈩?/div>

鈥?Single Pulse Avalanche Energy Rated

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

Symbol

Ordering Information

PART NUMBER

IRFP9150

PACKAGE

TO-247

BRAND

IRFP9150

NOTE: When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

4-63

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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