IRFP4232PBF Datasheet

IC型號(hào)：
IRFP4232PBF
PDF描述：
PDP MOSFET
文件大小：
294.15KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 96965A

PDP MOSFET

Features

Advanced process technology

Key parameters optimized for PDP Sustain &

Energy Recovery applications

Low E

PULSE

rating to reduce the power

dissipation in Sustain & ER applications

Low Q

for fast response

High repetitive peak current capability for

reliable operation

Short fall & rise times for fast switching

175擄C operating junction temperature for

improved ruggedness

Repetitive avalanche capability for robustness

and reliability

IRFP4232PbF

Key Parameters

250

300

310

117

175

min

DS (Avalanche)

typ.

DS(ON)

typ. @ 10V

PULSE

typ.

max @ T

= 100擄C

max

碌J

擄C

TO-247AC

Description

This

HEXFET

廬

Power MOSFET

is specifically designed for Sustain; Energy Recovery & Pass switch

applications in Plasma Display Panels. This

MOSFET

utilizes the latest processing techniques to achieve

low on-resistance per silicon area and low E

PULSE

rating. Additional features of this

MOSFET

are 175擄C

operating junction temperature and high repetitive peak current capability. These features combine to

make this

MOSFET

a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter

(TRANSIENT)

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

= 25擄C

= 100擄C

STG

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Repetitive Peak Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

Max.

鹵20

鹵30

240

117

430

210

2.9

-40 to + 175

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JC

Junction-to-Case

Typ.

鈥撯€撯€?/div>

Max.

0.35

Units

擄C/W

Notes

聛

through

聟

are on page 8

www.irf.com

04/21/05

標(biāo)準(zhǔn)包裝
25
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
250V
電流 - 連續(xù)漏極(Id) @ 25° C
60A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
35.7 毫歐 @ 42A，10V
Id 時(shí)的 Vgs(th)（最大）
5V @ 250µA
閘電荷(Qg) @ Vgs
240nC @ 10V
輸入電容 (Ciss) @ Vds
7290pF @ 25V
功率 - 最大
430W
安裝類型
通孔
封裝/外殼
TO-247-3
供應(yīng)商設(shè)備封裝
TO-247AC
包裝
散裝
其它名稱
Q2102191

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IRFP4232PBF Datasheet

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