IRFP340
Data Sheet
July 1999
File Number
2088.3
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a speci鏗乪d level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power 鏗乪ld
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Features
鈥?11A, 400V
鈥?r
DS(ON)
= 0.550鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRFP340
PACKAGE
TO-247
BRAND
IRFP340
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-329
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
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Intersil Corporation 1999
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