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IRFP245 Datasheet

  • IRFP245

  • 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Pow...

  • 7頁

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Semiconductor
IRFP244, IRFP245,
IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
July 1998
Features
鈥?15A and 14A, 275V and 250V
鈥?r
DS(ON)
= 0.28鈩?and 0.34鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?275V, 250VDC Rated, 120VAC Line System Operation
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
IRFP244
IRFP245
IRFP246
IRFP247
PACKAGE
TO-247
TO-247
TO-247
TO-247
BRAND
IRFP244
IRFP245
IRFP246
IRFP247
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
2211.2
5-1

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