Enhanced dv/dt capabilities offer improved ruggedness.
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Higher Gate voltage threshold offers improved noise
TO-247AC
immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25擄C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Max.
23
15
92
370
2.9
鹵 30
14
-55 to + 150
300 (1.6mm from case )
10lb in (1.1N m)
W
W/擄C
V
V/ns
擄C
A
Units
聶
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
x
x
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
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170
220
560
7.6
23
A
92
1.5
250
330
840
11
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25擄C, I
S
= 14A, V
GS
= 0V
T
J
= 25擄C, I
F
= 23A
T
J
= 125擄C, di/dt = 100A/碌s
T
J
= 125擄C, di/dt = 100A/碌s
T
J
= 25擄C
脙聶
f
f
f
f
T
J
= 25擄C, I
S
= 23A, V
GS
= 0V
980 1500
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
02/11/04
IRFP23N50LPBF 產(chǎn)品屬性
IRFP23N50L
500
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
500V
23A
235 毫歐 @ 14A，10V
5V @ 250µA
150nC @ 10V
3600pF @ 25V
370W
通孔
TO-247-3
TO-247-3
管件
*IRFP23N50LPBF
IRFP23N50LPBF相關(guān)型號PDF文件下載
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描述
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