= 0.052鈩?/div>
I
D
= 33A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
33
23
110
140
0.91
鹵20
300
16
14
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.24
鈥撯€撯€撯€?/div>
Max.
1.1
鈥撯€撯€撯€?/div>
40
Units
擄C/W
www.irf.com
1
10/5/98
IRFP140N 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
100V
33A
52 毫歐 @ 16A，10V
4V @ 250µA
94nC @ 10V
1400pF @ 25V
140W
通孔
TO-247-3
TO-247AC
散裝
*IRFP140N
IRFP140N相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
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