Provisional Data Sheet No. PD-9.1556
鈩?/div>
HEXFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFNG50
N-CHANNEL
Product Summary
Part Number
IRFNG50
BV
DSS
1000V
R
DS(on)
2.0鈩?/div>
I
D
5.5A
Features:
s
s
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
I D @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFNG50
5.5
3.5
22
150
1.2
鹵20
860
5.5
15.0
1.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
To Order
1
2
3
4
5
6
