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IRFM260 Datasheet

  • IRFM260

  • TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

  • 303.35KB

  • 8頁

  • IRF

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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFM260
N-CHANNEL
HEXFET
廬
TRANSISTOR
200Volt, 0.060鈩? HEXFET
鈩?/div>
HEXFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
HEXFET transistor鈥檚 totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
IRFM260
BV
DSS
200V
R
DS(on)
0.060鈩?/div>
I
D
35A*
Features:
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelet
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
I D @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Radiation
IRFM260
35*
28
180
250
2.0
鹵20
700
35
25
4.3
-55 to 150
o
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
C
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
To Order

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