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IRFM110A Datasheet

  • IRFM110A

  • Advanced Power MOSFET

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
碌
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.289
鈩?/div>
(Typ.)
IRFM110A
BV
DSS
= 100 V
R
DS(on)
= 0.4
鈩?/div>
I
D
= 1.5 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
C
)
Continuous Drain Current (T
A
=70
C
)
螣
螣
Value
100
1.5
1.19
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
螣
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
C
) *
Linear Derating Factor *
螣
12
+
20
_
60
1.5
0.2
6.5
2
0.016
- 55 to +150
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
螣
C
300
Thermal Resistance
Symbol
R
胃
JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
62
Units
螣
C/
W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
漏1999 Fairchild Semiconductor Corporation

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