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IRFM014A Datasheet

  • IRFM014A

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) |...

  • 260.57KB

  • 7頁(yè)

  • ETC

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= 60V
Lower R
DS(ON)
: 0.097
鈩?/div>
(Typ.)
IRFM014A
BV
DSS
= 60 V
R
DS(on)
= 0.14
鈩?/div>
I
D
= 2.8 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
o
C )
Continuous Drain Current (T
A
=70 C )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C ) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8鈥?/div>
from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
Value
60
2.8
2.25
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
22
+
_ 20
67
2.8
0.21
5.5
2.1
0.017
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
胃
JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
60
Units
o
C /W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
漏1999 Fairchild Semiconductor Corporation

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