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IRFIZ46N Datasheet

  • IRFIZ46N

  • Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A)

  • 8頁(yè)

  • IRF

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PD - 9.1306A
IRFIZ46N
HEXFET
廬
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
聟
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.020鈩?/div>
I
D
= 33A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聠
Avalanche Current聛聠
Repetitive Avalanche Energy聛聠
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
33
23
180
45
0.3
鹵20
230
16
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
3.3
65
Units
擄C/W
8/25/97

IRFIZ46N 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 33A

  • 20 毫歐 @ 19A，10V

  • 4V @ 250µA

  • 61nC @ 10V

  • 1500pF @ 25V

  • 45W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRFIZ46N

IRFIZ46N相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF [Inter...
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF [Inter...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...

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