音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRFIZ34V Datasheet

  • IRFIZ34V

  • Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A)

  • 8頁(yè)

  • IRF

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 94053
IRFIZ34V
HEXFET
廬
Power MOSFET
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
l
D
V
DSS
= 60V
R
DS(on)
= 28m鈩?/div>
G
S
I
D
= 20A
Advanced HEXFET
廬
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to
using a 100 micron mica barrier with standard TO-220
product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聟
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
20
14
120
30
0.20
鹵 20
81
30
3.0
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
5.0
65
Units
擄C/W
www.irf.com
1
12/12/00

IRFIZ34V相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF [Inter...
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF [Inter...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！