PD-91816B
SMPS MOSFET
IRFIB5N65A
HEXFET
廬
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
High Voltage Isolation = 2.5KVRMS聠
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
650V
R
DS(on)
max
0.93鈩?/div>
I
D
5.1A
TO-220 Full-Pak
GDS
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.1
3.2
21
60
0.48
鹵 30
2.8
-55 to + 150
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V/ns
擄C
Typical SMPS Topologies
l
l
Single Transistor Flyback
Single Transistor Forward
Notes
聛
through
聠are
on page 8
www.irf.com
1
6/21/00
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