Enhanced dv/dt capabilities offer improved ruggedness.
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Higher Gate voltage threshold offers improved noise
immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
4.7
3.0
16
42
0.33
鹵30
19
-55 to + 150
TO-220 Full-Pak
Units
A
W
W/擄C
V
V/ns
擄C
聶
P
D
@T
C
= 25擄C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
d
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10lb in (1.1N m)
x
x
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
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73
99
200
360
6.7
4.7
A
16
1.5
110
150
310
540
10
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
脙聶
p-n junction diode.
T
J
= 25擄C, I
S
= 4.0A, V
GS
= 0V
T
J
= 25擄C, I
F
= 4.0A
T
J
= 125擄C, di/dt = 100A/碌s
T
J
= 125擄C, di/dt = 100A/碌s
T
J
= 25擄C
f
f
f
f
nC T
J
= 25擄C, I
S
= 4.0A, V
GS
= 0V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
08/19/04
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