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IRFI9610GPBF Datasheet

  • IRFI9610GPBF

  • HEXFET POWER MOSFET

  • 8頁

  • IRF

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PD - 95504
IRFI9610GPbF
l
l
l
l
l
l
l
Isolated Package
High Voltage Isolation=2.5KVRMS
聟
Sink to Lead Creepage Dist.=4.8mm
P-Channel
Dynamic dv/dt Rating
Low thermal Resistance
Lead-Free
HEXFET
廬
Power MOSFET
D
V
DSS
= -200V
R
DS(on)
= 3.0鈩?/div>
G
I
D
= -2.0A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the
designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-
industrial applications. The moulding compound used provides a high isolation capability
and a low thermal resistance between the tab and external heatsink. This isolation is
equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak
is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-2.0
-1.3
-8.0
27
0.22
鹵 20
100
-2.0
2.7
-11
-55 to + 150
300 (1.6mm from case )
10 lbf聲in (1.1N聲m)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
聳聳聳
聳聳聳
Max.
4.6
65
Units
擄C/W
07/06/04

IRFI9610GPBF 產(chǎn)品屬性

  • IRFI9610G

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 標準型

  • 200V

  • 2A

  • 3 歐姆 @ 1.2A，10V

  • 4V @ 250µA

  • 13nC @ 10V

  • 180pF @ 25V

  • 27W

  • 通孔

  • TO-220-3 全封裝，隔離接片

  • TO-220-3

  • 管件

  • *IRFI9610GPBF

IRFI9610GPBF相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF [Inter...
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF [Inter...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...

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