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IRFI1310N Datasheet

  • IRFI1310N

  • Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A)

  • 8頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1611A
PRELIMINARY
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
聟
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
IRFI1310N
HEXFET
廬
Power MOSFET
D
V
DSS
= 100V
G
S
R
DS(on)
= 0.036鈩?/div>
I
D
= 24A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
d
v
/d
t
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聠
Avalanche Current聛聠
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
24
17
140
56
0.37
鹵 20
420
22
5.6
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
2.7
65
Units
擄C/W
3/16/98

IRFI1310N 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 24A

  • 36 毫歐 @ 13A，10V

  • 4V @ 250µA

  • 120nC @ 10V

  • 1900pF @ 25V

  • 56W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRFI1310N

IRFI1310N相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
    IRF [Inter...
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
    IRF [Inter...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    250V N-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD
  • 英文版
    200V N-Channel MOSFET
    FAIRCHILD ...

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