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PD - 9.1222
IRFI1310G
HEXFET
廬
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated
175擄C Operating Temperature
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
V
DSS
= 100V
R
DS(on)
= 0.04
鈩?/div>
I
D
= 22A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Collector Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
22
15
88
48
0.32
鹵20
120
22
4.8
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
Junction-to-Case
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
3.1
鈥撯€撯€撯€?/div>
Units
擄C/W
65
To Order
Revision 0
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英文版
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
IRF
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英文版
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
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TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
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TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
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TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
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英文版
TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
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FAIRCHILD
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Advanced Power MOSFET
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) ...
ETC
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) |...
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英文版
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
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英文版
200V N-Channel MOSFET
FAIRCHILD
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英文版
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
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200V N-Channel MOSFET
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英文版
250V N-Channel MOSFET
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英文版
250V N-Channel MOSFET
FAIRCHILD ...
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英文版
200V N-Channel MOSFET
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英文版
200V N-Channel MOSFET
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