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IRFG5110 Datasheet

  • IRFG5110

  • 100V, Combination 2N-2P-CHANNEL

  • 12頁

  • IRF

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PD - 90437D
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRFG5110
IRFG5110
R
DS(on)
0.7鈩?/div>
0.7鈩?/div>
I
D
1.0A
-1.0A
IRFG5110
100V, Combination 2N-2P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
廬
CHANNEL
N
P
HEXFET
廬
MOSFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor鈥檚 totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =鹵 10V, TC = 25擄C Continuous Drain Current
ID @ VGS =鹵 10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
N-Channel
1.0
0.6
4.0
1.4
0.011
鹵20
75
鉃?/div>
鈥?/div>
鈥?/div>
5.5
鉃?/div>
P-Channel
-1.0
-0.6
-4.0
1.4
0.011
Units
A
W
W/擄C
鹵20
75
鉃?/div>
鈥?/div>
鈥?/div>
-5.5
鉃?/div>
-55 to 150
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/16/02

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