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IRFE430 Datasheet

  • IRFE430

  • HEXFET TRANSISTOR

  • 131.07KB

  • 8頁(yè)

  • IRF

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Provisional Data Sheet No. PD - 9.1719
IRFE430
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6802U
HEXFET
廬
TRANSISTOR
JANTXV2N6802U
[REF:MIL-PRF-19500/557]
N-CHANNEL
500Volt, 1.50鈩? HEXFET
鈩?/div>
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
Product Summary
Part Number
IRFE430
BV
DSS
500V
R
DS(on)
1.50鈩?/div>
I
D
2.5A
Features:
n
n
n
n
n
n
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Small footprint
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聛
PD @ TC = 25擄C
VGS
EAS
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
300 ( for 5 seconds)
0.42 (typical)
IRFE430, JANTX-, JANTXV-, 2N6802U
Units
2.5
A
1.5
11
25
0.20
鹵20
0.31
6.2
-55 to 150
W
W/K
聟
V
mJ
V/ns
o
C
g
12/3097

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