IRFD1Z0 Datasheet

IC型號：
IRFD1Z0
PDF描述：
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Powe...
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Semiconductor

IRFD1Z0, IRFD1Z1,

IRFD1Z2, IRFD1Z3

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

Formerly developmental type TA17451.

July 1998

Features

鈥?0.4A and 0.5A, 60V and 100V

鈥?r

DS(ON)

= 2.4鈩?and 3.2鈩?/div>

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

IRFD1Z0

IRFD1Z1

IRFD1Z2

IRFD1Z3

PACKAGE

HEXDIP

BRAND

IRFD1Z0

IRFD1Z1

IRFD1Z2

IRFD1Z3

NOTE: When ordering, use the entire part number.

Packaging

HEXDIP

DRAIN

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

2313.1

5-1

型號

版本

描述

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