=0.299鈩?/div>
5" Wafer
Electrical Characteristics
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Guaranteed (Min/Max)
515V Min.
0.299鈩?Max.
2.3V Min., 3.9V Max.
5.0碌A Max.
100碌A Max.
-55擄C to 150擄C Max.
Test Conditions
V
GS
= 0V, I
D
= 150碌A
V
GS
= 10V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250碌A
V
DS
= 500V, V
GS
= 0V, T
J
= 25擄C
V
GS
= 45V
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Referenced Package Part:
Cr-NiV-Ag ( 0.1碌m-0.2碌m-0.25碌m )
Al with 1% Si (0.003 mm)
0.247" x 0.350" ( 6.26 mm x 8.88 mm )
125 mm
0.375 mm 鹵 0.025 mm
01-5426
0.0033"
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 擄C
IRFP460A
NOT ES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
Die Outline
1.60
[.063]
1.24
[.049]
S
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
E = EMITT ER
4. DIMENS IONAL TOLERANCES :
8.88
[.350]
BONDING PADS :
WIDT H
&
LENGT H
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLE RANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLE RANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
G
OVERALL DIE:
WIDT H
0.62
[.024]
0.68
[.027]
6.26
[.247]
&
LENGT H
5. UNLES S OT HERWIS E NOT ED ALL DIE ARE GEN III
www.irf.com
1
10/17/01
1
