=0.0033鈩?/div>
6" Wafer
Electrical Characteristics (Wafer Form)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Guaranteed (Min/Max)
75V Min.
3.3m鈩?Max.
2.0V Min., 4.0V Max.
20碌A(chǔ) Max.
鹵 200nA Max.
-55擄C to 175擄C Max.
Test Conditions
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
GS
= 10V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
DS
= 75V, V
GS
= 0V, T
J
= 25擄C
V
GS
= 鹵20V
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Cr-NiV-Ag ( 1kA擄-2kA擄-2.5kA擄 )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.375 mm 鹵 0.015 mm
01-5383
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 擄C
Die Outline
www.irf.com
1
11/18/99
Powered by ICminer.com Electronic-Library Service CopyRight 2003
1
